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| CMT60N03G N-CHANNEL Logic Level Power MOSFET APPLICATION Buck Converter High Side Switch Other Applications VDSS 30V RDS(ON) Typ. 10.8m ID 50A FEATURES Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Improved UIS Ruggedness PIN CONFIGURATION TO-252 TO-263 SYMBOL D Front View Front View D SOURCE DRAIN GATE G 1 2 3 S G 1 2 3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current Continuous Tc = 25, VGS@10V (Note 2) Continuous Tc = 100, VGS@10V (Note 2) Pulsed Tc = 25, VGS@10V (Note 3) Gate-to-Source Voltage Continue Total Power Dissipation Derating Factor above 25 Peak Diode Recovery dv/dt (Note 4) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=1.1mH,ID=30 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating dv/dt TJ, TSTG EAS TL TPKG IAS Symbol VDSS ID ID IDM VGS PD Value 30 50 Fig.3 Fig.6 20 52 0.5 3.0 -55 to 150 500 300 260 Fig.8 V W W/ V/ns mJ Unit V A THERMAL RESISTANCE Symbol RJC RJA RJA Parameter Junction-to-case Junction-to-ambient (PCB Mount) Junction-to-ambient Min Typ Max 2.4 50 62 Units /W /W /W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +150 Minimum pad area, 2-oz copper, FR-4 circuit board, double sided 1 cubic foot chamber, free air 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 1 CMT60N03G N-CHANNEL Logic Level Power MOSFET ORDERING INFORMATION Part Number CMT60N03GN252 CMT60N03GN263 Package TO-252 TO-263 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. CMT60N03G Characteristic OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Breakdown Voltage Temperature Coefficient, Fig.11 (Reference to 25, ID = 250 A) Drain-to-Source Leakage Current (VDS = 24 V, VGS = 0 V, TJ = 25) (VDS = 24 V, VGS = 0 V, TJ = 125) Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics Gate Threshold Voltage,Fig.12 (VDS = VGS, ID = 250 A) Static Drain-to-Source On-Resistance, Fig.9,10 (VGS = 10 V, ID = 15A) (VGS = 4.5 V, ID = 12A) Forward Transconductance (VDS = 15 V, ID = 12A) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Total Gate Charge (VGS = 4.5 V) Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current (Body Diode Fig.16) Pulse Source Current (Body Diode) Forward On-Voltage Forward Turn-On Time Reverse Recovery Charge (IS = 12 A, VGS = 0 V) (IF = 12 A, VGS = 0 V, di/dt = 100A/s) Integral pn-diode in MOSFET ISM VSD trr Qrr 25 31 Fig.6 1.0 38 46 A V ns nC (VDS = 15 V, ID = 12 A) (Note 6) Fig.15 (Note 5) Dynamic Characteristics (VDS = 15 V, VGS = 0 V, f = 1.0 MHz) Fig.14 Ciss Coss Crss Qg Qg Qgs Qgd Resistive Switching Characteristics (VDD = 15 V, ID = 12 A, VGS = 10 V, RG = 1.0) (Note 6) (VDD = 15 V, ID = 12 A, VGS = 4.5V, RG = 1.0) (Note 6) td(on) tr td(off) tf td(on) tr td(off) tf IS 10 3.4 36 6.0 16 7.2 34 14 50 ns ns ns ns ns ns ns ns A 1520 314 152 27.9 14 4.9 4.3 35 19 pF pF pF nC nC nC nC gFS (Note 5) RDS(on) 10.8 15.4 28 S 12.5 m VGS(th) 1.0 3.0 V IGSS -100 nA IGSS IDSS 1 10 100 nA A VDSS/TJ 27 mV/ VDSS 30 V Symbol Min Typ Max Units Source-Drain Diode Characteristics 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 2 CMT60N03G N-CHANNEL Logic Level Power MOSFET Note 1: TJ = +25 to 150 Note 2: Current is calculated based upon maximum allowable junction temperature. Package current limitation is 30A. Note 3: Repetitive rating; pulse width limited by maximum junction temperature. Note 4: ISD = 12.0A, di/dt 100A/s, VDD BVDSS, TJ = +150 Note 5: Pulse width 250s; duty cycle 2% Note 6: Essentially independent of operating temerpature. 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 3 CMT60N03G N-CHANNEL Logic Level Power MOSFET PACKAGE DIMENSION TO-252 B R C E PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE V 4 1 2 3 K S A U L G J H D TO-263 B C E V PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE 1 2 3 S K G J D H 2006/10/11 Rev1.2 Champion Microelectronic Corporation A Page 4 CMT60N03G N-CHANNEL Logic Level Power MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 5 |
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